Parametric results for: MSM56V16160D-10 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

DUAL BANK PAGE BURST 2

2 hits Apply

Access Time-Max (1)

9 ns 2

2 hits Apply

AUTO/SELF REFRESH 2

2 hits Apply

Clock Frequency-Max (fCLK) (1)

100 MHz 1

2 hits Apply

COMMON 1

2 hits Apply

1,2,4,8 1

2 hits Apply

R-PDSO-G50 2

2 hits Apply

20.95 mm 2

2 hits Apply

Manufacturer (2)

LAPIS Semiconductor Co Ltd 1 OKI Electric Industry Co Ltd 1

2 hits Apply

Memory Density (1)

16.7772 Mbit 2

2 hits Apply

SYNCHRONOUS DRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

50 2

2 hits Apply

1.0486 M 2

2 hits Apply

1000000.0 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

1MX16 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP2 2

2 hits Apply

TSOP50,.46,32 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Refresh Cycles (1)

4096 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply