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MSMBJ10AE3TR
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | 17 V | 1.38 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | HIGH RELIABILITY | 12.3 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROSEMI CORP | DO-214AA | R-PDSO-C2 | 2 | unknown | EAR99 | 8541.10.00.50 | ||
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MSMBJ10AE3/TR
Microsemi Corporation
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Check for Price | Yes | Transferred | 17 V | 1.38 W | 11.7 V | SILICON | 11.1 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 10 V | 1 | AVALANCHE | HIGH RELIABILITY | 12.3 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROSEMI CORP | R-PDSO-C2 | not_compliant | EAR99 | 8541.10.00.50 |