Parametric results for: MT40A256M16LY062EAATF under DRAMs

All Filters Access Mode I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 1

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COMMON 1

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8 1

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R-PBGA-B96 1

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13.5 mm 1

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Manufacturer (1)

Micron Technology Inc 1

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Memory Density (1)

4.295 Gbit 1

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DDR4 DRAM 1

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Memory Width (1)

16 1

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1.0 1

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1 1

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96 1

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268.4355 M 1

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2.56E8 1

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SYNCHRONOUS 1

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105.0 °C 1

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-40.0 °C 1

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Organization (1)

256MX16 1

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OPEN-DRAIN 1

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PLASTIC/EPOXY 1

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TFBGA 1

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BGA96,9X16,32 1

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RECTANGULAR 1

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GRID ARRAY, THIN PROFILE, FINE PITCH 1

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Refresh Cycles (1)

8192 1

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Supply Voltage-Nom (Vsup) (1)

1.2 V 1

1 hit Apply