Parametric results for: MT48LC64M4A2P-75 under DRAMs

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Manufacturer Part Number: mt48lc64m4a2p75
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MT48LC64M4A2P-75AIT:G
Micron Technology Inc
Check for Price Active SYNCHRONOUS DRAM MICRON TECHNOLOGY INC compliant EAR99 2018-06-14
MT48LC64M4A2P-75AT:D
Micron Technology Inc
Check for Price Yes Yes Active 268.4355 Mbit 4 64MX4 3.3 V 5.4 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 64000000 67.1089 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 Not Qualified e3 105 °C -40 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm MICRON TECHNOLOGY INC compliant EAR99 TSOP2 TSOP2, 54 8542.32.00.24
MT48LC64M4A2P-75IT
Micron Technology Inc
Check for Price Yes Yes Obsolete 268.4355 Mbit 4 64MX4 3.3 V 5.4 ns 133 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 270 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 Not Qualified e3 85 °C -40 °C 260 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm MICRON TECHNOLOGY INC compliant EAR99 TSOP2 TSOP2, TSOP54,.46,32 54 8542.32.00.24
MT48LC64M4A2P-75LIT
Micron Technology Inc
Check for Price Yes Yes Obsolete 268.4355 Mbit 4 64MX4 3.3 V 5.4 ns 133 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 270 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 Not Qualified e3 85 °C -40 °C 260 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm MICRON TECHNOLOGY INC compliant EAR99 TSOP2 TSOP2, TSOP54,.46,32 54 8542.32.00.24
MT48LC64M4A2P-75IT:D
Micron Technology Inc
Check for Price Yes Yes Active 268.4355 Mbit 4 64MX4 3.3 V 5.4 ns 133 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 270 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 Not Qualified e3 85 °C -40 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm MICRON TECHNOLOGY INC compliant EAR99 TSOP2 TSOP2, TSOP54,.46,32 54 8542.32.00.24
MT48LC64M4A2P-75LAIT:D
Micron Technology Inc
Check for Price Active SYNCHRONOUS DRAM MICRON TECHNOLOGY INC compliant EAR99 2018-06-14
MT48LC64M4A2P-75LAIT:G
Micron Technology Inc
Check for Price Active SYNCHRONOUS DRAM MICRON TECHNOLOGY INC compliant EAR99 2018-06-14
MT48LC64M4A2P-75AAT:D
Micron Technology Inc
Check for Price Active SYNCHRONOUS DRAM MICRON TECHNOLOGY INC compliant EAR99 2018-06-14
MT48LC64M4A2P-75L
Micron Technology Inc
Check for Price Yes Yes Obsolete 268.4355 Mbit 4 64MX4 3.3 V 5.4 ns 133 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 270 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e3 70 °C 260 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES MATTE TIN GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm MICRON TECHNOLOGY INC compliant EAR99 TSOP2 TSOP2, TSOP54,.46,32 54 8542.32.00.24
MT48LC64M4A2P-75AIT:D
Micron Technology Inc
Check for Price Active SYNCHRONOUS DRAM MICRON TECHNOLOGY INC compliant EAR99 2018-06-14