Parametric results for: MT4VDDT1664HY-40B under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (2)

FOUR BANK PAGE BURST 1 SINGLE BANK PAGE BURST 1

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Access Time-Max (1)

700 ps 3

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AUTO/SELF REFRESH 2

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Clock Frequency-Max (fCLK) (1)

200 MHz 3

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COMMON 3

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R-PDMA-N200 3 R-XDMA-N200 2

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e3 1 e4 2

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Manufacturer (1)

Micron Technology Inc 5

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Memory Density (1)

1.0737 Gbit 5

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DDR DRAM MODULE 5

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Memory Width (1)

64 5

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1 1

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1.0 2

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1 2

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200 5

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16.7772 M 5

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1.6E7 5

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SYNCHRONOUS 2

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70.0 °C 5

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0.0 °C 5

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Organization (1)

16MX64 5

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3-STATE 3

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PLASTIC/EPOXY 3 UNSPECIFIED 2

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DIMM 5

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DIMM200,24 3

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RECTANGULAR 5

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MICROELECTRONIC ASSEMBLY 5

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Refresh Cycles (1)

8192 3

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Supply Voltage-Nom (Vsup) (1)

2.6 V 5

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