Parametric results for: MT58L512L18FS-10IT under SRAMs

All Filters Access Time-Max JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

10 ns 3

3 hits Apply

R-PQFP-G100 3

3 hits Apply

e0 1

3 hits Apply

20 mm 3

3 hits Apply

Manufacturer (3)

Cypress Semiconductor 1 Micron Technology Inc 1 Rochester Electronics LLC 1

3 hits Apply

Memory Density (1)

9.4372 Mbit 3

3 hits Apply

CACHE SRAM 3

3 hits Apply

Memory Width (1)

18 3

3 hits Apply

3 1

3 hits Apply

1.0 3

3 hits Apply

100 3

3 hits Apply

524.288 k 3

3 hits Apply

512000.0 3

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

85.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

512KX18 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

LQFP 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLATPACK, LOW PROFILE 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 3

3 hits Apply