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MXUPTB28E3
Microchip Technology Inc
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$23.5726 | Yes | Active | 47.8 V | 1 µA | 2.5 W | SILICON | 31 V | TRANS VOLTAGE SUPPRESSOR DIODE | BIDIRECTIONAL | SINGLE | YES | 28 V | 1 | AVALANCHE | HIGH RELIABILITY, MIL-STD-750 | 1 kW | 28 V | Not Qualified | S-PSSO-G1 | e3 | AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-PRF-19500 | DO-216AA | 1 | 150 °C | -65 °C | 1 | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | ||||||||
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MXUPTB28E3/TR7
Microsemi Corporation
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Check for Price | Yes | Obsolete | 2.5 W | SILICON | 31 V | TRANS VOLTAGE SUPPRESSOR DIODE | BIDIRECTIONAL | SINGLE | YES | 28 V | 1 | AVALANCHE | LOW LEAKAGE CURRENT | 150 W | Not Qualified | R-PDSO-G1 | e3 | DO-216AA | 1 | 150 °C | -65 °C | ANODE | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MICROSEMI CORP | unknown | R-PDSO-G1 | EAR99 | 8541.10.00.50 | ||||||||
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MXUPTB28E3/TR13
Microsemi Corporation
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Check for Price | Yes | Obsolete | 2.5 W | SILICON | 31 V | TRANS VOLTAGE SUPPRESSOR DIODE | BIDIRECTIONAL | SINGLE | YES | 28 V | 1 | AVALANCHE | LOW LEAKAGE CURRENT | 150 W | Not Qualified | R-PDSO-G1 | e3 | DO-216AA | 1 | 150 °C | -65 °C | ANODE | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MICROSEMI CORP | unknown | R-PDSO-G1 | EAR99 | 8541.10.00.50 | ||||||||
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MXUPTB28E3
Microsemi Corporation
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Check for Price | Yes | Transferred | 47.8 V | 1 µA | 2.5 W | SILICON | 31 V | TRANS VOLTAGE SUPPRESSOR DIODE | BIDIRECTIONAL | SINGLE | YES | 28 V | 1 | AVALANCHE | 1 kW | 28 V | Not Qualified | S-PSSO-G1 | e3 | AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 | DO-216AA | 1 | 150 °C | -65 °C | 1 | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | DO-216AA | 2 |