Parametric results for: NAND01GW3B2BZA6E under Flash Memories

All Filters Access Time-Max Command User Interface Data Polling JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (2)

20 ns 1 25 µs 2

Min (ns) - Max (ns)

3 hits Apply

YES 3

3 hits Apply

NO 3

3 hits Apply

R-PBGA-B63 3

3 hits Apply

e1 1 e3 1

3 hits Apply

11 mm 2 12 mm 1

Min (mm) - Max (mm)

3 hits Apply

Manufacturer (3)

Micron Technology Inc 1 Numonyx Memory Solutions 1 STMicroelectronics 1

3 hits Apply

Memory Density (1)

1.0737 Gbit 3

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1 1

3 hits Apply

1.0 3

3 hits Apply

1K 3

3 hits Apply

63 3

3 hits Apply

134.2177 M 3

3 hits Apply

1.28E8 3

3 hits Apply

ASYNCHRONOUS 3

3 hits Apply

85.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

128MX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TFBGA 3

3 hits Apply

BGA63,10X12,32 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 3

3 hits Apply

2K words 3

3 hits Apply

Sector Size (1)

128K 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 3

3 hits Apply