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NAND01GW4B2AZA1E
STMicroelectronics
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Check for Price | Yes | Transferred | 1.0737 Gbit | 16 | 64K | 64MX16 | 3 V | 25 µs | FLASH | YES | NO | 1 | 1K | 64000000 | 67.1089 M | ASYNCHRONOUS | 1K words | PARALLEL | 3 V | YES | 50 µA | 30 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | NO | R-PBGA-B63 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | STMICROELECTRONICS | BGA | TFBGA, BGA63,10X12,32 | 63 | compliant | EAR99 | 8542.32.00.51 | ||||||
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NAND01GW4B2AZA1E
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 16 | 64MX16 | 3 V | 35 ns | FLASH | 1 | 64000000 | 67.1089 M | ASYNCHRONOUS | PARALLEL | 3 V | 30 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | NAND TYPE | R-PBGA-B63 | e1 | 70 °C | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 63 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||
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NAND01GW4B2AZA1E
Numonyx Memory Solutions
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Check for Price | Transferred | 1.0737 Gbit | 16 | 64MX16 | 3 V | 25 µs | FLASH | 1 | 64000000 | 67.1089 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B63 | Not Qualified | e1 | 70 °C | 260 | NOT SPECIFIED | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | NUMONYX | BGA | TFBGA, | 63 | unknown | EAR99 | 8542.32.00.51 |