Parametric results for: NAND04GR3B2DZL1F under Flash Memories

All Filters Access Time-Max Command User Interface Data Polling JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (2)

30 ns 2 25 µs 1

Min (ns) - Max (ns)

3 hits Apply

YES 3

3 hits Apply

NO 3

3 hits Apply

R-PBGA-B52 2

3 hits Apply

e3/e4 1

3 hits Apply

17 mm 2

3 hits Apply

Manufacturer (3)

Micron Technology Inc 1 Numonyx Memory Solutions 1 STMicroelectronics 1

3 hits Apply

Memory Density (2)

4.1943 Mbit 1 4.295 Gbit 2

Min (bit) - Max (bit)

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1.0 2

3 hits Apply

4K 3

3 hits Apply

52 3

3 hits Apply

524.288 k 1 536.8709 M 2

Min (words) - Max (words)

3 hits Apply

512000.0 1 5.12E8 2

Min - Max

3 hits Apply

ASYNCHRONOUS 2

3 hits Apply

70.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (2)

512KX8 1 512MX8 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

LGA 1 VBGA 2

3 hits Apply

LGA52(UNSPEC) 3

3 hits Apply

RECTANGULAR 2

3 hits Apply

GRID ARRAY 1 GRID ARRAY, VERY THIN PROFILE 2

3 hits Apply

2K words 3

3 hits Apply

Sector Size (1)

128K 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 3

3 hits Apply