Parametric results for: NE4210S01-T1 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

LOW NOISE, HIGH RELIABILITY 2

14 hits Apply

SOURCE 14

14 hits Apply

Configuration (1)

SINGLE 14

14 hits Apply

DS Breakdown Voltage-Min (1)

3 V 14

14 hits Apply

Drain Current-Max (ID) (1)

15 mA 14

14 hits Apply

HETERO-JUNCTION 14

14 hits Apply

Highest Frequency Band (2)

KU BAND 12 X BAND 2

14 hits Apply

O-XRDB-G4 2 X-PXMW-G4 12

14 hits Apply

e0 3 e4 1 e6 2

14 hits Apply

Manufacturer (4)

NEC Compound Semiconductor Devices Ltd 4 NEC Electronics America Inc 2 NEC Electronics Group 4 Renesas Electronics Corporation 4

14 hits Apply

1 4

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

4 14

14 hits Apply

DEPLETION MODE 14

14 hits Apply

125.0 °C 2

14 hits Apply

PLASTIC/EPOXY 12 UNSPECIFIED 2

14 hits Apply

ROUND 2 UNSPECIFIED 12

14 hits Apply

DISK BUTTON 2 MICROWAVE 12

14 hits Apply

Obsolete 4 Transferred 10

14 hits Apply

Yes 4

14 hits Apply

230 3

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

14 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 14

14 hits Apply

Surface Mount (1)

YES 14

14 hits Apply