Parametric results for: NE425S01 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 5 LOW NOISE, HIGH RELIABILITY 5

11 hits Apply

SOURCE 8

11 hits Apply

Configuration (1)

SINGLE 11

11 hits Apply

DS Breakdown Voltage-Min (2)

3 V 6 4 V 5

Min (V) - Max (V)

11 hits Apply

Drain Current-Max (ID) (1)

20 mA 8

11 hits Apply

HETERO-JUNCTION 11

11 hits Apply

Highest Frequency Band (1)

KU BAND 11

11 hits Apply

O-CRDB-G4 2 O-PRDB-G4 5 O-XRDB-G4 1 X-PXMW-G4 3

11 hits Apply

Manufacturer (4)

NEC Compound Semiconductor Devices Ltd 3 NEC Electronics America Inc 3 NEC Electronics Group 2 Renesas Electronics Corporation 3

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

4 11

11 hits Apply

DEPLETION MODE 11

11 hits Apply

125.0 °C 1

11 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 PLASTIC/EPOXY 8 UNSPECIFIED 1

11 hits Apply

ROUND 8 UNSPECIFIED 3

11 hits Apply

DISK BUTTON 8 MICROWAVE 3

11 hits Apply

Obsolete 10 Transferred 1

11 hits Apply

Yes 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

165 mW 1

11 hits Apply

Power Gain-Min (Gp) (1)

10.5 dB 11

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply