Datasheets
NE425S01-T1 by:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET

Part Details for NE425S01-T1 by NEC Electronics Group

Overview of NE425S01-T1 by NEC Electronics Group

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Applications Telecommunications

Part Details for NE425S01-T1

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NE425S01-T1 Part Data Attributes:

NE425S01-T1 NEC Electronics Group
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NE425S01-T1 NEC Electronics Group RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
Part Life Cycle Code Transferred
Ihs Manufacturer NEC ELECTRONICS CORP
Package Description DISK BUTTON, O-CRDB-G4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 3 V
Drain Current-Max (ID) 0.02 A
FET Technology HETERO-JUNCTION
Highest Frequency Band KU BAND
JESD-30 Code O-CRDB-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 10.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NE425S01-T1

This table gives cross-reference parts and alternative options found for NE425S01-T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE425S01-T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE425S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, NEC Electronics America Inc NE425S01-T1 vs NE425S01-T1B
NE425S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE425S01-T1 vs NE425S01-T1B
NE425S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, NEC Electronics America Inc NE425S01-T1 vs NE425S01-T1
NE425S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Compound Semiconductor Devices Ltd NE425S01-T1 vs NE425S01-T1B
NE425S01-T1B NE425S01-T1B Renesas Electronics Corporation NE425S01-T1 vs NE425S01-T1B
Part Number Description Manufacturer Compare
NE434S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, S01, 4 PIN NEC Electronics America Inc NE425S01-T1 vs NE434S01-T1
NE76038 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, 38, 4 PIN NEC Electronics America Inc NE425S01-T1 vs NE76038
NE76118-T1M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd NE425S01-T1 vs NE76118-T1M
NE722S01 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, S01, 4 PIN NEC Electronics Group NE425S01-T1 vs NE722S01
NE76118-T1 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, 18, 4 PIN NEC Electronics America Inc NE425S01-T1 vs NE76118-T1
NE425S01 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, NEC Compound Semiconductor Devices Ltd NE425S01-T1 vs NE425S01
NE33284A-T2 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET California Eastern Laboratories (CEL) NE425S01-T1 vs NE33284A-T2
MGF4919G RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN Mitsubishi Electric NE425S01-T1 vs MGF4919G
NE425S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, NEC Electronics America Inc NE425S01-T1 vs NE425S01-T1
NE72218-57 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group NE425S01-T1 vs NE72218-57

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