Parametric results for: NM93C66LZN under EEPROMs

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

40 YEAR DATA RETENTION 2 MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; ERAL AT 3.0V TO 6.0V; DATA RETENTION = 40 YEARS 1

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Clock Frequency-Max (fCLK) (1)

250 kHz 3

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40 2

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1000000.0 Write/Erase Cycles 2

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R-PDIP-T8 3

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e0 2

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9.817 mm 3

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Manufacturer (3)

Fairchild Semiconductor Corporation 1 Rochester Electronics LLC 1 Texas Instruments 1

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Memory Density (1)

4.096 kbit 3

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EEPROM 3

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Memory Width (1)

16 2

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1.0 3

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8 3

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256 words 3

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256.0 3

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SYNCHRONOUS 3

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70.0 °C 3

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0.0 °C 3

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Organization (1)

256X16 3

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3-STATE 1

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PLASTIC/EPOXY 3

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DIP 3

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DIP8,.3 2

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RECTANGULAR 3

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IN-LINE 3

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Supply Voltage-Nom (Vsup) (2)

3.3 V 2 5 V 1

Min (V) - Max (V)

3 hits Apply