Parametric results for: NP36P06SLG under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

54.8 mJ 2

11 hits Apply

DRAIN 4

11 hits Apply

Configuration (2)

SINGLE 7 SINGLE WITH BUILT-IN DIODE 4

11 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

11 hits Apply

Drain Current-Max (ID) (1)

36 A 11

11 hits Apply

Drain-source On Resistance-Max (1)

40 mΩ 4

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-252AA 4

11 hits Apply

R-PSSO-G2 4

11 hits Apply

e0 2 e3 2

11 hits Apply

Manufacturer (2)

NEC Electronics Group 2 Renesas Electronics Corporation 9

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

2 4

11 hits Apply

ENHANCEMENT MODE 9

11 hits Apply

175.0 °C 9

11 hits Apply

PLASTIC/EPOXY 4

11 hits Apply

RECTANGULAR 4

11 hits Apply

SMALL OUTLINE 4

11 hits Apply

Active 6 Obsolete 3 Transferred 2

11 hits Apply

No 1 Yes 3

11 hits Apply

260 1 NOT SPECIFIED 2

11 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 11

11 hits Apply

56 W 9

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply