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NX3DV221GM,115
NXP Semiconductors
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$0.4427 | Yes | Active | 2.5 V | YES | 7 Ω | 100 mΩ | 50 ns | 23 ns | CMOS | 6 | 1 | 38 dB | SEPARATE OUTPUT | 3.6 V | 2.3 V | BREAK-BEFORE-MAKE | INDUSTRIAL | R-PQCC-N10 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 10 | PLASTIC/EPOXY | VQCCN | LCC10,.06X.08,20 | RECTANGULAR | CHIP CARRIER, VERY THIN PROFILE | Matte Tin (Sn) | NO LEAD | 580 µm | QUAD | 2 mm | 500 µm | 1.55 mm | NXP SEMICONDUCTORS | QFN | 2 X 1.55 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT1049-2, QFN-10 | 10 | SOT1049-2 | compliant | 8542.39.00.01 | NXP | |||
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NX3DV221GM
NXP Semiconductors
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Check for Price | Yes | Active | 2.5 V | YES | 7 Ω | 100 mΩ | 50 ns | 23 ns | DIFFERENTIAL MULTIPLEXER | 6 | 1 | 38 dB | 3.6 V | 2.3 V | INDUSTRIAL | R-PQCC-N10 | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 10 | PLASTIC/EPOXY | VQCCN | LCC10,.06X.08,20 | RECTANGULAR | CHIP CARRIER, VERY THIN PROFILE | NICKEL PALLADIUM GOLD | NO LEAD | 580 µm | QUAD | 2 mm | 500 µm | 1.55 mm | NXP SEMICONDUCTORS | QFN | 2 X 1.55 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT1049-2, QFN-10 | 10 | compliant | 8542.39.00.01 | NXP | |||||||
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NX3DV221GM,132
NXP Semiconductors
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Check for Price | Yes | Obsolete | 2.5 V | YES | 7 Ω | 100 mΩ | 50 ns | 23 ns | DIFFERENTIAL MULTIPLEXER | 6 | 1 | 38 dB | SEPARATE OUTPUT | 3.6 V | 2.3 V | INDUSTRIAL | R-PQCC-N10 | Not Qualified | 85 °C | -40 °C | 10 | PLASTIC/EPOXY | VQCCN | LCC10,.06X.08,20 | RECTANGULAR | CHIP CARRIER, VERY THIN PROFILE | NO LEAD | 580 µm | QUAD | 2 mm | 500 µm | 1.55 mm | NXP SEMICONDUCTORS | QFN | 2 X 1.55 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT1049-2, QFN-10 | 10 | SOT1049-2 | unknown |