Parametric results for: PC28F640P30BF65 under Flash Memories

Filter Your Search

1 - 4 of 4 results

|
Manufacturer Part Number: pc28f640p30bf65
Select parts from the table below to compare.
Compare
Compare
PC28F640P30BF65BTR
Micron Technology Inc
Check for Price Active FLASH 1.8 V MICRON TECHNOLOGY INC compliant
PC28F640P30BF65A
Micron Technology Inc
Check for Price Yes Obsolete 67.1089 Mbit 16 16K,64K 4MX16 1.8 V 65 ns FLASH BOTTOM YES YES NO 1 4,63 4000000 4.1943 M ASYNCHRONOUS/SYNCHRONOUS 3-STATE 8 words PARALLEL 1.8 V 35 µA 28 µA 2 V 1.7 V CMOS INDUSTRIAL NO NOR TYPE R-PBGA-B64 Not Qualified 85 °C -40 °C 64 PLASTIC/EPOXY TBGA BGA64,8X8,40 RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 13 mm 10 mm MICRON TECHNOLOGY INC unknown EAR99 8542.32.00.51 Micron
PC28F640P30BF65B
Micron Technology Inc
Check for Price Yes Obsolete 67.1089 Mbit 16 16K,64K 4MX16 1.8 V 65 ns FLASH BOTTOM YES YES NO 1 4,63 4000000 4.1943 M ASYNCHRONOUS/SYNCHRONOUS 3-STATE 8 words PARALLEL 1.8 V 35 µA 28 µA 2 V 1.7 V CMOS INDUSTRIAL NO NOR TYPE R-PBGA-B64 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 64 PLASTIC/EPOXY TBGA BGA64,8X8,40 RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 13 mm 10 mm MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 Micron BGA-64
PC28F640P30BF65
Micron Technology Inc
Check for Price Yes Yes Obsolete 67.1089 Mbit 16 16K,64K 4MX16 1.8 V 65 ns FLASH BOTTOM YES YES NO 1 4,63 4000000 4.1943 M ASYNCHRONOUS/SYNCHRONOUS 3-STATE 8 words PARALLEL 1.8 V 35 µA 28 µA 2 V 1.7 V CMOS INDUSTRIAL NO NOR TYPE R-PBGA-B64 e1 85 °C -40 °C 64 PLASTIC/EPOXY TBGA BGA64,8X8,40 RECTANGULAR GRID ARRAY, THIN PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.2 mm 13 mm 10 mm MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 10 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, BGA-64 BGA 64