Parametric results for: PD25N06S under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

12 hits Apply

12.0 mJ 3 80.0 mJ 7

Min (mJ) - Max (mJ)

12 hits Apply

DRAIN 10

12 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 10

12 hits Apply

DS Breakdown Voltage-Min (2)

55 V 7 60 V 3

Min (V) - Max (V)

12 hits Apply

Drain Current-Max (ID) (2)

25 A 3 29 A 8

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (2)

30 mΩ 3 40 mΩ 7

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

12 hits Apply

32 pF 2 61 pF 1

Min (pF) - Max (pF)

12 hits Apply

TO-252 10

12 hits Apply

R-PSSO-G2 10

12 hits Apply

e0 1 e3 4

12 hits Apply

Manufacturer (1)

Infineon Technologies AG 12

12 hits Apply

1 4

12 hits Apply

Number of Elements (1)

1 11

12 hits Apply

Number of Terminals (1)

2 10

12 hits Apply

ENHANCEMENT MODE 11

12 hits Apply

175.0 °C 7

12 hits Apply

-55.0 °C 3

12 hits Apply

PLASTIC/EPOXY 10

12 hits Apply

RECTANGULAR 10

12 hits Apply

SMALL OUTLINE 10

12 hits Apply

Active 10 Obsolete 2

12 hits Apply

Yes 3

12 hits Apply

NOT SPECIFIED 6

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

12 hits Apply

29 W 2 50 W 1 68 W 3

Min (W) - Max (W)

12 hits Apply

Surface Mount (1)

YES 11

12 hits Apply