Parametric results for: PSMN0 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 29 AVALANCHE RATED, HIGH RELIABILITY 3 HIGH RELIABILITY 18 HIGH RELIABILITY, ULTRA-LOW RESISTANCE 2 LOGIC LEVEL COMPATIBLE 55 LOW THRESHOLD 5

554 hits Apply

5.6 mJ 3 7.0 mJ 9 7.7 mJ 3 8.0 mJ 4 9.0 mJ 5 13.0 mJ 11 14.0 mJ 2 18.0 mJ 7 21.0 mJ 3 23.0 mJ 3 23.9 mJ 3 24.0 mJ 5 25.0 mJ 3 32.0 mJ 4 37.0 mJ 3 42.0 mJ 8 44.0 mJ 6 45.1 mJ 3 55.0 mJ 6 59.0 mJ 6 64.0 mJ 3 68.0 mJ 3 70.0 mJ 3 71.0 mJ 6 87.0 mJ 3 100.0 mJ 6 101.0 mJ 6 115.0 mJ 3 120.0 mJ 24 121.0 mJ 3 125.0 mJ 3 127.0 mJ 6 162.0 mJ 3 170.0 mJ 3 255.0 mJ 4 260.0 mJ 7 264.0 mJ 7 268.0 mJ 10 300.0 mJ 21 320.0 mJ 16 342.0 mJ 5 357.0 mJ 4 395.0 mJ 10 460.0 mJ 12 462.0 mJ 12 500.0 mJ 31 502.0 mJ 7 650.0 mJ 3 661.0 mJ 4 707.0 mJ 3

Min (mJ) - Max (mJ)

554 hits Apply

DRAIN 366 ISOLATED 6

554 hits Apply

Configuration (2)

SINGLE 106 SINGLE WITH BUILT-IN DIODE 403

554 hits Apply

DS Breakdown Voltage-Min (13)

20 V 5 25 V 29 30 V 57 36 V 9 40 V 4 55 V 21 60 V 31 75 V 18 80 V 43 100 V 110 110 V 4 150 V 45 200 V 27

Min (V) - Max (V)

554 hits Apply

Drain Current-Max (ID) (50)

3.5 A 7 6.3 A 9 10 A 2 12 A 2 15 A 3 17 A 4 18 A 4 20 A 9 21 A 3 22 A 6 23.4 A 3 24 A 6 25 A 4 27 A 2 28.1 A 4 29 A 12 30 A 18 31.8 A 4 32 A 31 32.1 A 3 33 A 5 34 A 7 35 A 12 35.2 A 3 37 A 14 39 A 20 40 A 4 43 A 9 44 A 4 45 A 5 46 A 4 47 A 8 48 A 2 50 A 33 51 A 7 55.5 A 12 57 A 4 58 A 4 59 A 4 60 A 8 61 A 3 67 A 8 68 A 8 73 A 4 74 A 8 75 A 121 82 A 4 96 A 4 100 A 20 300 A 6

Min (A) - Max (A)

554 hits Apply

Drain-source On Resistance-Max (50)

1.25 mΩ 5 1.29 mΩ 3 2.9 mΩ 4 3.6 mΩ 8 4 mΩ 12 5 mΩ 12 5.4 mΩ 12 5.5 mΩ 7 6.7 mΩ 10 7.5 mΩ 4 8.2 mΩ 5 8.5 mΩ 10 8.8 mΩ 8 9 mΩ 3 11 mΩ 13 11.1 mΩ 3 12 mΩ 5 13 mΩ 10 13.9 mΩ 11 14 mΩ 8 14.5 mΩ 3 14.8 mΩ 6 15 mΩ 22 15.7 mΩ 3 16 mΩ 8 16.3 mΩ 3 16.9 mΩ 6 17 mΩ 6 18 mΩ 3 19 mΩ 6 20 mΩ 3 20.5 mΩ 3 23.3 mΩ 3 23.4 mΩ 6 24.7 mΩ 3 25 mΩ 11 26.8 mΩ 8 27 mΩ 5 27.5 mΩ 7 30 mΩ 10 34.5 mΩ 6 35 mΩ 12 38 mΩ 7 40 mΩ 4 57 mΩ 11 59 mΩ 4 63 mΩ 7 70 mΩ 12 72.4 mΩ 4 85 mΩ 7

Min (Ω) - Max (Ω)

554 hits Apply

METAL-OXIDE SEMICONDUCTOR 509

554 hits Apply

700 pF 2

554 hits Apply

MO-235 91 MS-012AA 30 TO-220AB 81 TO-247 17 TO-252AA 5 TO-262AA 6

554 hits Apply

R-PDSO-G8 30 R-PDSO-N8 2 R-PSFM-T3 113 R-PSFM-T4 3 R-PSIP-T3 3 R-PSSO-G2 130 R-PSSO-G4 115 S-PDSO-N5 7

554 hits Apply

e0 4 e3 397 e4 24

554 hits Apply

Manufacturer (3)

Nexperia 237 NXP Semiconductors 275 Philips Semiconductors 42

554 hits Apply

1 292 2 25

554 hits Apply

Number of Elements (1)

1 509

554 hits Apply

Number of Terminals (5)

2 130 3 116 4 118 5 7 8 32

554 hits Apply

ENHANCEMENT MODE 508

554 hits Apply

150.0 °C 41 175.0 °C 230

Min (°C) - Max (°C)

554 hits Apply

-55.0 °C 9

554 hits Apply

PLASTIC/EPOXY 403

554 hits Apply

RECTANGULAR 396 SQUARE 7

554 hits Apply

FLANGE MOUNT 116 IN-LINE 3 SMALL OUTLINE 284

554 hits Apply

Active 121 End Of Life 26 Obsolete 148 Transferred 259

554 hits Apply

No 4 Yes 51

554 hits Apply

245 82 260 157 NOT SPECIFIED 84

554 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 509

554 hits Apply

3 W 2 3.5 W 15 8.3 W 5 25 W 1 26 W 2 29 W 1 30 W 1 31 W 1 33 W 1 37 W 1 38 W 2 40 W 1 41 W 3 41.1 W 1 45 W 1 46.1 W 1 47 W 1 48.4 W 1 49 W 1 56 W 7 64 W 1 65 W 4 74 W 4 80 W 2 86 W 6 89 W 4 91 W 2 94.9 W 1 103 W 5 106 W 4 113 W 3 117 W 2 125 W 2 130 W 2 148 W 6 150 W 9 170 W 4 230 W 65 238 W 3 250 W 15 300 W 22

Min (W) - Max (W)

554 hits Apply

Surface Mount (2)

NO 154 YES 355

554 hits Apply