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PSMN016-100YS,115
Nexperia
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$0.4426 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 51 A | 16.3 mΩ | 87 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 204 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOIC | LFPAK-4 | 4 | SOT669 | not_compliant | EAR99 | Nexperia | ||||||
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PSMN016-100YS
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 51 A | 16.3 mΩ | 87 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 204 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | NXP SEMICONDUCTORS | PLASTIC, LFPAK-4 | 235 | not_compliant | EAR99 | |||||||
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PSMN016-100YS,115
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE | 1 | 51 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 117 W | e3 | 1 | 175 °C | 260 | 30 | TIN | NXP SEMICONDUCTORS | SOIC | 4 | SOT669 | not_compliant | EAR99 | NXP | ||||||||||||||||||||
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PSMN016-100YS
Nexperia
|
Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 51 A | 16.3 mΩ | 87 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 204 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | LFPAK-4 | not_compliant | EAR99 | Nexperia | 2017-02-01 |