Parametric results for: R1LV1616RSD-8SI under SRAMs

All Filters Access Time-Max Alternate Memory Width I/O Type JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

85 ns 1

1 hit Apply

8 1

1 hit Apply

COMMON 1

1 hit Apply

R-PDSO-G52 1

1 hit Apply

10.79 mm 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

Memory Density (1)

16.7772 Mbit 1

1 hit Apply

STANDARD SRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

2 1

1 hit Apply

1.0 1

1 hit Apply

52 1

1 hit Apply

1.0486 M 1

1 hit Apply

1000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

1MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSSOP 1

1 hit Apply

TSSOP52,.4,16 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3 V 1

1 hit Apply