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1 - 10 of 10 results
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RF1S540
Harris Semiconductor
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 77 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | HARRIS SEMICONDUCTOR | unknown | EAR99 | ||||||||
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RF1S540SM9A
Intersil Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | HIGH INPUT IMPEDANCE | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INTERSIL CORP | not_compliant | EAR99 | |||||||
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RF1S540SM
Rochester Electronics LLC
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | unknown | |||||||
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RF1S540SM9A
Harris Semiconductor
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | HARRIS SEMICONDUCTOR | unknown | EAR99 | SMALL OUTLINE, R-PSSO-G2 | ||||||||||||
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RF1S540SM
Intersil Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | HIGH INPUT IMPEDANCE | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INTERSIL CORP | not_compliant | EAR99 | |||||||
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RF1S540SM
Harris Semiconductor
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | HARRIS SEMICONDUCTOR | unknown | EAR99 | ||||||||
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RF1S540
Rochester Electronics LLC
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 77 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | COMMERCIAL | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | unknown | ||||||||||||||
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RF1S540SM
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | AVALANCHE RATED | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 W | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | |||||||
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RF1S540SM9A
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 28 A | 77 mΩ | AVALANCHE RATED | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 W | 110 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | |||||||
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RF1S540
Intersil Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 77 mΩ | 230 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INTERSIL CORP | not_compliant | EAR99 |