Parametric results for: S25FL512SAGBHIA10 under Flash Memories

All Filters Additional Feature Alternate Memory Width Boot Block Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

IT ALSO HAVE MEMORY WIDTH X1 1

3 hits Apply

1 1 2 1 4 1

Min - Max

3 hits Apply

BOTTOM/TOP 1

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Clock Frequency-Max (fCLK) (1)

133 MHz 3

3 hits Apply

20 3

3 hits Apply

100000.0 Write/Erase Cycles 3

3 hits Apply

R-PBGA-B24 3

3 hits Apply

e1 2

3 hits Apply

8 mm 3

3 hits Apply

Manufacturer (3)

Cypress Semiconductor 1 Infineon Technologies AG 1 Spansion 1

3 hits Apply

Memory Density (2)

512.7537 Mbit 2 536.8709 Mbit 1

Min (bit) - Max (bit)

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (2)

4 1 8 2

Min - Max

3 hits Apply

3 1

3 hits Apply

1.0 3

3 hits Apply

24 3

3 hits Apply

64.0942 M 2 134.2177 M 1

Min (words) - Max (words)

3 hits Apply

6.4E7 2 1.28E8 1

Min - Max

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

85.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (2)

128MX4 1 64MX8 2

3 hits Apply

3-STATE 2

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PLASTIC/EPOXY 3

3 hits Apply

TBGA 3

3 hits Apply

BGA24,5X5,40 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

GRID ARRAY, THIN PROFILE 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 3

3 hits Apply