Findchips: Parametric Search Results for S29GL01GS10DHIV10

Parametric results for: S29GL01GS10DHIV10 under Flash Memories

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		S29GL01GS10DHI020 Spansion
		S29GL01GS10DHI020 Infineon Technologies AG
		S29GL01GS10DHI010 Cypress Semiconductor
		S29GL01GS10DHI020 Cypress Semiconductor
		IS29GL01GS-10DHI02 Integrated Silicon Solution Inc
		IS29GL01GS-10DHI02-TR Integrated Silicon Solution Inc
		S29GL01GS10DHI013 Spansion
		IS29GL01GS-10DHI01 Integrated Silicon Solution Inc
		S29GL01GS10DHI023 Infineon Technologies AG
		S29GL01GS10DHI010 Spansion

				Most Relevant						Technical																											Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Alternate Memory Width	Boot Block	Command User Interface	Common Flash Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Page Size	Parallel/Serial	Programming Voltage	Ready/Busy	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code	Samacsys Manufacturer

$6.9600

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

SPANSION INC

BGA

LEAD FREE, PACKAGE

compliant

3A991.B.1.A

8542.32.00.51

Spansion

$11.7933

Yes

Active

1.0737 Gbit

128K

128MX8

3 V

100 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

YES

100000 Write/Erase Cycles

128000000

134.2177 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

S-PBGA-B64

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INFINEON TECHNOLOGIES AG

compliant

Infineon

$12.2900

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

3 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

$12.4394

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

3 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

Check for Price

Active

1.0737 Gbit

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

128000000

134.2177 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

S-PBGA-B64

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

LBGA

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INTEGRATED SILICON SOLUTION INC

LBGA,

unknown

EAR99

8542.32.00.51

Check for Price

Active

1.0737 Gbit

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

128000000

134.2177 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

S-PBGA-B64

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

LBGA

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INTEGRATED SILICON SOLUTION INC

LBGA,

unknown

EAR99

8542.32.00.51

Check for Price

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

SPANSION INC

BGA

LEAD FREE, PACKAGE

compliant

3A991.B.1.A

8542.32.00.51

Check for Price

Active

1.0737 Gbit

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

128000000

134.2177 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

S-PBGA-B64

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

LBGA

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INTEGRATED SILICON SOLUTION INC

LBGA,

unknown

EAR99

8542.32.00.51

Check for Price

Yes

Active

1.0737 Gbit

128K

128MX8

3 V

100 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

YES

100000 Write/Erase Cycles

128000000

134.2177 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

S-PBGA-B64

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INFINEON TECHNOLOGIES AG

compliant

Check for Price

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.4 mm

9 mm

SPANSION INC

BGA

LEAD FREE, PACKAGE

compliant

3A991.B.1.A

8542.32.00.51

Spansion

1 2 Next

Compare

S29GL01GS10DHI020

Spansion

$6.9600

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

SPANSION INC

BGA

LEAD FREE, PACKAGE

compliant

3A991.B.1.A

8542.32.00.51

Spansion

S29GL01GS10DHI020

Infineon Technologies AG

$11.7933

Yes

Active

1.0737 Gbit

128K

128MX8

3 V

100 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

YES

100000 Write/Erase Cycles

128000000

134.2177 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

S-PBGA-B64

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INFINEON TECHNOLOGIES AG

compliant

Infineon

S29GL01GS10DHI010

Cypress Semiconductor

$12.2900

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

3 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

S29GL01GS10DHI020

Cypress Semiconductor

$12.4394

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

3 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

IS29GL01GS-10DHI02

Integrated Silicon Solution Inc

Check for Price

Active

1.0737 Gbit

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

128000000

134.2177 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

S-PBGA-B64

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

LBGA

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INTEGRATED SILICON SOLUTION INC

LBGA,

unknown

EAR99

8542.32.00.51

IS29GL01GS-10DHI02-TR

Integrated Silicon Solution Inc

Check for Price

Active

1.0737 Gbit

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

128000000

134.2177 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

S-PBGA-B64

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

LBGA

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INTEGRATED SILICON SOLUTION INC

LBGA,

unknown

EAR99

8542.32.00.51

S29GL01GS10DHI013

Spansion

Check for Price

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

SPANSION INC

BGA

LEAD FREE, PACKAGE

compliant

3A991.B.1.A

8542.32.00.51

IS29GL01GS-10DHI01

Integrated Silicon Solution Inc

Check for Price

Active

1.0737 Gbit

128MX8

3 V

100 ns

FLASH

BOTTOM/TOP

128000000

134.2177 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

S-PBGA-B64

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

LBGA

SQUARE

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INTEGRATED SILICON SOLUTION INC

LBGA,

unknown

EAR99

8542.32.00.51

S29GL01GS10DHI023

Infineon Technologies AG

Check for Price

Yes

Active

1.0737 Gbit

128K

128MX8

3 V

100 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

YES

100000 Write/Erase Cycles

128000000

134.2177 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

S-PBGA-B64

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.4 mm

9 mm

INFINEON TECHNOLOGIES AG

compliant

S29GL01GS10DHI010

Spansion

Check for Price

Yes

Transferred

1.0737 Gbit

64K

128MX8

3 V

100 ns

FLASH

YES

128000000

134.2177 M

ASYNCHRONOUS

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

S-PBGA-B64

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

SQUARE

GRID ARRAY, LOW PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.4 mm

9 mm

SPANSION INC

BGA

LEAD FREE, PACKAGE

compliant

3A991.B.1.A

8542.32.00.51

Spansion

1 2 Next