Findchips: Parametric Search Results for S29GL256S10FHIV10


Select Parts		Part Number

		S29GL256S10FHIV10 Cypress Semiconductor
		S29GL256S10FHIV10 Infineon Technologies AG
		S29GL256S10FHIV10 Spansion
		IS29GL256S10FHIV10 Integrated Silicon Solution Inc

				Most Relevant						Technical																										Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Boot Block	Command User Interface	Common Flash Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Page Size	Parallel/Serial	Programming Voltage	Ready/Busy	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Reach Compliance Code	ECCN Code	HTS Code	Samacsys Manufacturer	Part Package Code	Package Description	Pin Count

$5.3820

Yes

Transferred

268.4355 Mbit

64K

16MX16

3 V

100 ns

FLASH

BOTTOM/TOP

YES

256

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

16 words

PARALLEL

3 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

Check for Price

Yes

Active

268.4355 Mbit

128K

16MX16

3 V

100 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

YES

100000 Write/Erase Cycles

256

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

R-PBGA-B64

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

INFINEON TECHNOLOGIES AG

compliant

Infineon

Check for Price

Yes

Transferred

268.4355 Mbit

64K

16MX16

3 V

100 ns

FLASH

YES

256

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B64

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

SPANSION INC

compliant

EAR99

8542.32.00.51

BGA

LEAD FREE, PACKAGE

Check for Price

Active

268.4355 Mbit

32MX8

3 V

100 ns

FLASH

BOTTOM/TOP

32000000

33.5544 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

R-PBGA-B64

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

INTEGRATED SILICON SOLUTION INC

unknown

EAR99

8542.32.00.51

LBGA,

Compare

S29GL256S10FHIV10

Cypress Semiconductor

$5.3820

Yes

Transferred

268.4355 Mbit

64K

16MX16

3 V

100 ns

FLASH

BOTTOM/TOP

YES

256

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

16 words

PARALLEL

3 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B64

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

CYPRESS SEMICONDUCTOR CORP

compliant

3A991.B.1.A

8542.32.00.51

S29GL256S10FHIV10

Infineon Technologies AG

Check for Price

Yes

Active

268.4355 Mbit

128K

16MX16

3 V

100 ns

FLASH

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

YES

100000 Write/Erase Cycles

256

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

32 words

PARALLEL

3 V

YES

100 µA

3.6 V

2.7 V

CMOS

YES

NAND TYPE

R-PBGA-B64

85 °C

-40 °C

260

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

INFINEON TECHNOLOGIES AG

compliant

Infineon

S29GL256S10FHIV10

Spansion

Check for Price

Yes

Transferred

268.4355 Mbit

64K

16MX16

3 V

100 ns

FLASH

YES

256

16000000

16.7772 M

ASYNCHRONOUS

3-STATE

16 words

PARALLEL

2.7 V

YES

100 µA

80 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

YES

NOR TYPE

R-PBGA-B64

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

SPANSION INC

compliant

EAR99

8542.32.00.51

BGA

LEAD FREE, PACKAGE

IS29GL256S10FHIV10

Integrated Silicon Solution Inc

Check for Price

Active

268.4355 Mbit

32MX8

3 V

100 ns

FLASH

BOTTOM/TOP

32000000

33.5544 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

INDUSTRIAL

NOR TYPE

R-PBGA-B64

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

YES

BALL

1 mm

BOTTOM

1.4 mm

13 mm

11 mm

INTEGRATED SILICON SOLUTION INC

unknown

EAR99

8542.32.00.51

LBGA,

Parametric results for: S29GL256S10FHIV10 under Flash Memories