Parametric results for: S29GL512P10TAIV10 under Flash Memories

All Filters Access Time-Max JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

100 ns 2

2 hits Apply

R-PDSO-G56 2

2 hits Apply

18.4 mm 2

2 hits Apply

Manufacturer (2)

Cypress Semiconductor 1 Spansion 1

2 hits Apply

Memory Density (1)

536.8709 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

1 2

2 hits Apply

1.0 2

2 hits Apply

56 2

2 hits Apply

536.8709 M 2

2 hits Apply

5.12E8 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

512MX1 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

HTSSOP 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply