Findchips: Parametric Search Results for S71WS256ND0BAWA70

Parametric results for: S71WS256ND0BAWA70 under Other Memory ICs

Select parts from the table below to compare.

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Select Parts		Part Number

		S71WS256ND0BAWYM2 Cypress Semiconductor
		S71WS256ND0BAWYZ0 AMD
		S71WS256ND0BAWYM3 AMD
		S71WS256ND0BAWYP2 Cypress Semiconductor
		S71WS256ND0BAWE62 Spansion
		S71WS256ND0BAWE31 AMD
		S71WS256ND0BAWYP3 Spansion
		S71WS256ND0BAWE72 Spansion
		S71WS256ND0BAWYP3 AMD
		S71WS256ND0BAWYK0 Spansion

			Most Relevant						Technical													Compliance			Operating Conditions			Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Power Supplies	Access Time-Max	Memory IC Type	Additional Feature	Mixed Memory Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Reach Compliance Code	Package Description	ECCN Code	HTS Code	Part Package Code	Pin Count

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

70 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

40 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

compliant

FBGA, BGA84,10X12,32

EAR99

8542.32.00.71

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

40 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

compliant

FBGA, BGA84,10X12,32

EAR99

8542.32.00.71

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

70 µA

54 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

Check for Price

Transferred

268.4355 Mbit

16MX16

1.8 V

MEMORY CIRCUIT

PSRAM IS ORGANIZED AS 8M X 16BIT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

FLASH+PSRAM

16000000

16.7772 M

ASYNCHRONOUS

1.95 V

1.7 V

CMOS

R-PBGA-B84

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

Tin/Lead (Sn/Pb)

BALL

800 µm

BOTTOM

1.2 mm

12 mm

9 mm

SPANSION INC

unknown

EAR99

8542.32.00.71

Check for Price

Yes

Active

1.8 V

70 ns

MEMORY CIRCUIT

FLASH+PSRAM

40 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

compliant

FBGA, BGA84,10X12,32

EAR99

8542.32.00.71

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

1.8 V

80 ns

MEMORY CIRCUIT

PSRAM IS ORGANIZED AS 8M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE

FLASH+PSRAM

16000000

16.7772 M

ASYNCHRONOUS

70 µA

54 µA

1.95 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12 mm

9 mm

SPANSION INC

compliant

TFBGA, BGA84,10X12,32

EAR99

8542.32.00.71

BGA

Check for Price

Obsolete

268.4355 Mbit

16MX16

1.8 V

MEMORY CIRCUIT

PSRAM IS ORGANIZED AS 8M X 16BIT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

FLASH+PSRAM

16000000

16.7772 M

ASYNCHRONOUS

1.95 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

12 mm

9 mm

SPANSION INC

compliant

TFBGA,

EAR99

8542.32.00.71

BGA

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

40 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

compliant

FBGA, BGA84,10X12,32

EAR99

8542.32.00.71

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

1.8 V

80 ns

MEMORY CIRCUIT

PSRAM IS ORGANIZED AS 8M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE

FLASH+PSRAM

16000000

16.7772 M

ASYNCHRONOUS

70 µA

54 µA

1.95 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12 mm

9 mm

SPANSION INC

compliant

TFBGA, BGA84,10X12,32

EAR99

8542.32.00.71

BGA

1 2 3 4 5 Next

Compare

S71WS256ND0BAWYM2

Cypress Semiconductor

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

70 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

S71WS256ND0BAWYZ0

AMD

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

40 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

compliant

FBGA, BGA84,10X12,32

EAR99

8542.32.00.71

S71WS256ND0BAWYM3

AMD

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

40 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

compliant

FBGA, BGA84,10X12,32

EAR99

8542.32.00.71

S71WS256ND0BAWYP2

Cypress Semiconductor

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

70 µA

54 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

S71WS256ND0BAWE62

Spansion

Check for Price

Transferred

268.4355 Mbit

16MX16

1.8 V

MEMORY CIRCUIT

PSRAM IS ORGANIZED AS 8M X 16BIT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

FLASH+PSRAM

16000000

16.7772 M

ASYNCHRONOUS

1.95 V

1.7 V

CMOS

R-PBGA-B84

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

Tin/Lead (Sn/Pb)

BALL

800 µm

BOTTOM

1.2 mm

12 mm

9 mm

SPANSION INC

unknown

EAR99

8542.32.00.71

S71WS256ND0BAWE31

AMD

Check for Price

Yes

Active

1.8 V

70 ns

MEMORY CIRCUIT

FLASH+PSRAM

40 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

compliant

FBGA, BGA84,10X12,32

EAR99

8542.32.00.71

S71WS256ND0BAWYP3

Spansion

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

1.8 V

80 ns

MEMORY CIRCUIT

PSRAM IS ORGANIZED AS 8M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE

FLASH+PSRAM

16000000

16.7772 M

ASYNCHRONOUS

70 µA

54 µA

1.95 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12 mm

9 mm

SPANSION INC

compliant

TFBGA, BGA84,10X12,32

EAR99

8542.32.00.71

BGA

S71WS256ND0BAWE72

Spansion

Check for Price

Obsolete

268.4355 Mbit

16MX16

1.8 V

MEMORY CIRCUIT

PSRAM IS ORGANIZED AS 8M X 16BIT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

FLASH+PSRAM

16000000

16.7772 M

ASYNCHRONOUS

1.95 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

12 mm

9 mm

SPANSION INC

compliant

TFBGA,

EAR99

8542.32.00.71

BGA

S71WS256ND0BAWYP3

AMD

Check for Price

Yes

Active

1.8 V

80 ns

MEMORY CIRCUIT

FLASH+PSRAM

40 µA

66 µA

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

FBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

compliant

FBGA, BGA84,10X12,32

EAR99

8542.32.00.71

S71WS256ND0BAWYK0

Spansion

Check for Price

Yes

Obsolete

268.4355 Mbit

16MX16

1.8 V

80 ns

MEMORY CIRCUIT

PSRAM IS ORGANIZED AS 8M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE

FLASH+PSRAM

16000000

16.7772 M

ASYNCHRONOUS

70 µA

54 µA

1.95 V

1.7 V

CMOS

OTHER

R-PBGA-B84

Not Qualified

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

12 mm

9 mm

SPANSION INC

compliant

TFBGA, BGA84,10X12,32

EAR99

8542.32.00.71

BGA

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