Parametric results for: SD5200N under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOW INSERTION LOSS 1

4 hits Apply

Configuration (1)

COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

4 hits Apply

Drain Current-Max (ID) (1)

50 mA 4

4 hits Apply

Drain-source On Resistance-Max (1)

80 Ω 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

0.5 pF 3

4 hits Apply

R-PDIP-T16 4

4 hits Apply

Manufacturer (4)

Calogic Inc 1 Microchip Technology Inc 1 Teledyne Technologies Inc 1 Universal Semiconductor Inc 1

4 hits Apply

Number of Elements (1)

4 4

4 hits Apply

Number of Terminals (1)

16 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

85.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

No 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply