Parametric results for: SI9926DY under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

20 V 9

9 hits Apply

Drain Current-Max (ID) (2)

6 A 1 6.5 A 8

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (1)

30 mΩ 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

R-PDSO-G8 9

9 hits Apply

e3 3

9 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 7 Rochester Electronics LLC 1 Temic Semiconductors 1

9 hits Apply

1 2

9 hits Apply

Number of Elements (1)

2 9

9 hits Apply

Number of Terminals (1)

8 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 7

9 hits Apply

-55.0 °C 1

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 9

9 hits Apply

SMALL OUTLINE 9

9 hits Apply

Active 1 Obsolete 8

9 hits Apply

Yes 1

9 hits Apply

260 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

2 W 2

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply