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SIHF640S-GE3
Vishay Intertechnologies
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$0.8493 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | compliant | EAR99 | Vishay | |||||||
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SIHF640L-GE3
Vishay Intertechnologies
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$1.0792 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | Not Qualified | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3 | compliant | EAR99 | Vishay | ||||||||
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SIHF640S-GE3
Vishay Siliconix
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY SILICONIX | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | Vishay | D2PAK | 4 | ||||
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SIHF640L-GE3
Vishay Siliconix
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | Not Qualified | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | IN-LINE, R-PSIP-T3 | unknown | EAR99 | Vishay | TO-262AA | 3 | |||||
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SIHF640L
Vishay Siliconix
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Check for Price | No | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | IN-LINE, R-PSIP-T3 | unknown | EAR99 | TO-262AA | 3 |