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SPD18P06PGBTMA1
Infineon Technologies AG
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$0.8291 | No | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 18.6 A | 130 mΩ | AVALANCHE RATED | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 74.4 A | SILICON | TO-252AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-252AB | SMALL OUTLINE, R-PSSO-G2 | 4 | not_compliant | EAR99 | Infineon | |||
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SPD18P06PGBT
Infineon Technologies AG
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Check for Price | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 18.6 A | 130 mΩ | AVALANCHE RATED | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 74.4 A | SILICON | TO-252AB | R-PSSO-G2 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-252, 3 PIN | compliant | EAR99 | ||||||||||||||
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SPD18P06PG
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 18.6 A | 130 mΩ | AVALANCHE RATED | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 W | 74.4 A | SILICON | TO-252AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-252AB | GREEN, PLASTIC, TO-252, 3 PIN | 4 | not_compliant | EAR99 | |||
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SPD18P06PGXT
Infineon Technologies AG
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Check for Price | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 18.6 A | 130 mΩ | AVALANCHE RATED | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 74.4 A | SILICON | TO-252AB | R-PSSO-G2 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-252AB | GREEN, PLASTIC, TO-252, 3 PIN | 4 | compliant | EAR99 |