Parametric results for: SSM6J501NULF under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

2 hits Apply

Drain Current-Max (ID) (1)

10 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

26.5 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

280 pF 1

2 hits Apply

S-PDSO-N6 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

6 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

SQUARE 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 2

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 1

2 hits Apply

1 W 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply