Filter Your Search
1 - 5 of 5 results
|
SST39WF1601-70-4I-B3KE
Microchip Technology Inc
|
$1.8280 | Yes | Yes | Active | 16.7772 Mbit | 16 | 2K | 1MX16 | 1.8 V | 70 ns | FLASH | BOTTOM BOOT-BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 512 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.8 V | 40 µA | 25 µA | 1.95 V | 1.65 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | MICROCHIP TECHNOLOGY INC | BGA | 6 X 8 MM, ROHS COMPLIANT, MO-210AB-1, TFBGA-48 | 48 | compliant | 3A991.B.1.A | 8542.32.00.51 | Microchip | |||
|
SST39WF1601-70-4I-B3KE-T
Microchip Technology Inc
|
$3.0150 | Yes | Active | 16.7772 Mbit | 16 | 2K | 1MX16 | 1.8 V | 70 ns | FLASH | BOTTOM BOOT-BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 512 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.8 V | 40 µA | 25 µA | 1.95 V | 1.65 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | MICROCHIP TECHNOLOGY INC | compliant | 3A991.B.1.A | 8542.32.00.51 | |||||||||||||
|
SST39WF1601-70-4I-B3KE
Silicon Storage Technology
|
Check for Price | Yes | Transferred | 16.7772 Mbit | 16 | 2K | 1MX16 | 1.8 V | 70 ns | FLASH | BOTTOM | YES | YES | YES | 1 | 512 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 40 µA | 10 µA | 1.95 V | 1.65 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | SILICON STORAGE TECHNOLOGY INC | BGA | TFBGA, BGA48,6X8,32 | 48 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
|
SST39WF1601-70-4I-B3KE-MQ1
Microchip Technology Inc
|
Check for Price | Yes | Active | 16.7772 Mbit | 16 | 2K | 1MX16 | 1.8 V | 70 ns | FLASH | BOTTOM BOOT-BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 512 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.8 V | 40 µA | 25 µA | 1.95 V | 1.65 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | e1 | 3 | 85 °C | -40 °C | AEC-Q100 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | MICROCHIP TECHNOLOGY INC | TFBGA-48 | compliant | 3A991.B.1.A | 8542.32.00.51 | |||||||||
|
SST39WF1601-70-4I-B3KE-MQ1-T
Microchip Technology Inc
|
Check for Price | Yes | Active | 16.7772 Mbit | 16 | 2K | 1MX16 | 1.8 V | 70 ns | FLASH | BOTTOM BOOT-BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 512 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.8 V | 40 µA | 25 µA | 1.95 V | 1.65 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | AEC-Q100 | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | MICROCHIP TECHNOLOGY INC | compliant | 3A991.B.1.A | 8542.32.00.51 |