Parametric results for: TC511001BFT-60 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

NIBBLE 1

1 hit Apply

Access Time-Max (1)

60 ns 1

1 hit Apply

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH 1

1 hit Apply

R-PDSO-G20 1

1 hit Apply

e0 1

1 hit Apply

14.4 mm 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

1 hit Apply

Memory Density (1)

1.0486 Mbit 1

1 hit Apply

NIBBLE MODE DRAM 1

1 hit Apply

Memory Width (1)

1 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

20 1

1 hit Apply

1.0486 M 1

1 hit Apply

1000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

1MX1 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP1 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Refresh Cycles (1)

512 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply