Parametric results for: TC5516APL under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (2)

200 ns 1 250 ns 1

Min (ns) - Max (ns)

2 hits Apply

COMMON 2

2 hits Apply

R-PDIP-T24 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Memory Density (1)

16.384 kbit 2

2 hits Apply

STANDARD SRAM 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 1

2 hits Apply

24 2

2 hits Apply

2.048 k 2

2 hits Apply

2000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 1 85.0 °C 1

Min (°C) - Max (°C)

2 hits Apply

-30.0 °C 1 0.0 °C 1

Min (°C) - Max (°C)

2 hits Apply

Organization (1)

2KX8 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

DIP 2

2 hits Apply

DIP24,.6 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply