Parametric results for: TC58NYG1S3HBAI6 under Flash Memories

All Filters Access Time-Max JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

25 ns 1

2 hits Apply

R-PBGA-B67 2

2 hits Apply

8 mm 2

2 hits Apply

Manufacturer (2)

KIOXIA 1 Toshiba America Electronic Components 1

2 hits Apply

Memory Density (1)

2.1475 Gbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

67 2

2 hits Apply

268.4355 M 2

2 hits Apply

2.56E8 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

256MX8 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

BGA 1 VFBGA 1

2 hits Apply

BGA67,8X10,32 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

GRID ARRAY 1 GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 2

2 hits Apply