Parametric results for: UPA1851 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4 SINGLE WITH BUILT-IN DIODE 1

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

5 hits Apply

Drain Current-Max (ID) (1)

2.5 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

250 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G8 5

5 hits Apply

e0 1 e6 2

5 hits Apply

Manufacturer (2)

NEC Electronics Group 2 Renesas Electronics Corporation 3

5 hits Apply

Number of Elements (2)

1 1 2 4

Min - Max

5 hits Apply

Number of Terminals (1)

8 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

2 W 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply