Parametric results for: XSTR-BSS84-FET under Small Signal Field-Effect Transistors

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Manufacturer Part Number: bss84
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BSS84,215
Nexperia
$0.0339 Yes Not Recommended P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω LOGIC LEVEL COMPATIBLE 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 PLASTIC PACKAGE-3 3 SOT23 compliant EAR99 8541.21.00.95 Nexperia
BSS84-TP
Micro Commercial Components
$0.0403 Yes Active 50 V 130 mA e3 1 260 10 MATTE TIN MICRO COMMERCIAL COMPONENTS CORP , compliant EAR99
BSS84A-TP
Micro Commercial Components
$0.0410 Active 60 V 170 mA e3 260 10 MATTE TIN MICRO COMMERCIAL COMPONENTS CORP , compliant EAR99
BSS84-7-F
SPC Multicomp
$0.0595 Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW SWITCHING SILICON R-PDSO-G3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL MULTICOMP PRO SOT-23, 3 PIN unknown EAR99
BSS84K-TP
Micro Commercial Components
$0.0597 Yes Active 60 V 130 mA 7 Ω e3 260 10 MATTE TIN MICRO COMMERCIAL COMPONENTS CORP , compliant EAR99
BSS84PWH6327XTSA1
Infineon Technologies AG
$0.0612 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 150 mA 8 Ω AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON R-PDSO-G3 e3 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SMALL OUTLINE, R-PDSO-G3 3 compliant EAR99 Infineon
BSS84-7-F
Diodes Incorporated
$0.0646 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω HIGH RELIABILITY, LOW THRESHOLD 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC 3 compliant EAR99
BSS84AK,215
Nexperia
$0.0672 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 180 mA 8.5 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 AEC-Q101; IEC-60134 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA TO-236 3 SOT23 compliant Nexperia 2017-02-01
BSS84AKW,115
Nexperia
$0.0761 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 150 mA 8.5 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101; IEC-60134 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NEXPERIA SC-70 SC-70, 3 PIN 3 SOT323 compliant EAR99 Nexperia 2017-02-01
BSS84DW-7-F
Diodes Incorporated
$0.0768 Yes Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 50 V 2 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G6 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC 6 compliant EAR99 8541.21.00.95