Parametric results for: am29lv010b-70jf under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

70 ns 4

4 hits Apply

MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION 1

4 hits Apply

YES 2

4 hits Apply

YES 2

4 hits Apply

20 1

4 hits Apply

1000000.0 Write/Erase Cycles 2

4 hits Apply

R-PQCC-J32 4

4 hits Apply

e3 2

4 hits Apply

13.97 mm 2

4 hits Apply

Manufacturer (3)

FUJITSU Limited 1 FUJITSU Semiconductor Limited 1 Spansion 2

4 hits Apply

Memory Density (1)

1.0486 Mbit 4

4 hits Apply

FLASH 4

4 hits Apply

Memory Width (1)

8 4

4 hits Apply

3 2

4 hits Apply

1.0 2

4 hits Apply

8 2

4 hits Apply

32 4

4 hits Apply

131.072 k 4

4 hits Apply

128000.0 4

4 hits Apply

ASYNCHRONOUS 2

4 hits Apply

85.0 °C 4

4 hits Apply

-40.0 °C 4

4 hits Apply

Organization (1)

128KX8 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

QCCJ 4

4 hits Apply

LDCC32,.5X.6 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

CHIP CARRIER 4

4 hits Apply

Sector Size (1)

16K 2

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

4 hits Apply