Parametric results for: at28c16e under EEPROMs

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Manufacturer Part Number: at28c16e
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AT28C16E-20DC
Atmel Corporation
Check for Price No No Obsolete 16.384 kbit 8 2KX8 5 V 200 ns EEPROM AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS NO YES 10 100000 Write/Erase Cycles 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 5 V 100 µA 30 µA 5.5 V 4.5 V CMOS COMMERCIAL NO 200 µs R-GDIP-T24 Not Qualified e0 70 °C MIL-STD-883 24 CERAMIC, GLASS-SEALED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.72 mm 32.15 mm 15.24 mm ATMEL CORP DIP DIP, DIP24,.6 24 unknown EAR99 8542.32.00.51
AT28C16E-15JIT/R
Atmel Corporation
Check for Price Obsolete 16.384 kbit 8 2KX8 5 V 150 ns EEPROM AUTOMATIC WRITE 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 5 V 5.5 V 4.5 V CMOS INDUSTRIAL R-PQCC-J32 Not Qualified 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm ATMEL CORP QFJ PLASTIC, LCC-32 32 unknown EAR99 8542.32.00.51
AT28C16E-15JU
Atmel Corporation
Check for Price Yes Obsolete 16.384 kbit 8 2KX8 5 V 150 ns EEPROM AUTOMATIC WRITE; 10 YEARS DATA RETENTION NO YES 10 100000 Write/Erase Cycles 1 2000 2.048 k ASYNCHRONOUS PARALLEL 5 V 100 µA 45 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO 200 µs R-PQCC-J32 Not Qualified e3 2 85 °C -40 °C 245 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES MATTE TIN J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm ATMEL CORP QFJ QCCJ, LDCC32,.5X.6 32 unknown EAR99 8542.32.00.51
AT28C16E-45DC
Atmel Corporation
Check for Price No Obsolete 16.384 kbit 8 2KX8 5 V 450 ns EEPROM NO YES 100000 Write/Erase Cycles 2000 2.048 k PARALLEL 2 mA 30 µA CMOS COMMERCIAL NO 200 µs R-XDIP-T24 Not Qualified e0 70 °C 24 CERAMIC DIP DIP24,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL ATMEL CORP DIP, DIP24,.6 unknown EAR99 8542.32.00.51
AT28C16E-45DM/883
Atmel Corporation
Check for Price No No Obsolete 16.384 kbit 8 2KX8 5 V 450 ns EEPROM AUTOMATIC WRITE NO YES 100000 Write/Erase Cycles 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 5 V 3 mA 45 µA 5.5 V 4.5 V CMOS MILITARY NO 200 µs R-GDIP-T24 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 24 CERAMIC, GLASS-SEALED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.72 mm 32.15 mm 15.24 mm ATMEL CORP DIP DIP, DIP24,.6 24 unknown 3A001.A.2.C 8542.32.00.51
AT28C16E-20JCT/R
Atmel Corporation
Check for Price Obsolete 16.384 kbit 8 2KX8 5 V 200 ns EEPROM AUTOMATIC WRITE 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 5 V 5.5 V 4.5 V CMOS COMMERCIAL R-PQCC-J32 Not Qualified 70 °C 32 PLASTIC/EPOXY QCCJ RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm ATMEL CORP QFJ QCCJ, 32 unknown EAR99 8542.32.00.51
AT28C16E-35DI
Atmel Corporation
Check for Price No Obsolete 16.384 kbit 8 2KX8 5 V 350 ns EEPROM NO YES 100000 Write/Erase Cycles 2000 2.048 k PARALLEL 3 mA 45 µA CMOS INDUSTRIAL NO 200 µs R-XDIP-T24 Not Qualified e0 85 °C -40 °C 24 CERAMIC DIP DIP24,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL ATMEL CORP DIP, DIP24,.6 unknown EAR99 8542.32.00.51
AT28C16E-15SI
Microchip Technology Inc
Check for Price Active 16.384 kbit 8 2KX8 5 V 150 ns EEPROM NO YES 10 100000 Write/Erase Cycles 1 2000 2.048 k ASYNCHRONOUS PARALLEL 5 V 100 µA 45 µA 5.5 V 4.5 V CMOS 200 µs R-PDSO-G24 85 °C -40 °C 24 PLASTIC/EPOXY SOP SOP24,.4 RECTANGULAR SMALL OUTLINE YES GULL WING 1.27 mm DUAL 2.67 mm 15.4 mm 7.495 mm MICROCHIP TECHNOLOGY INC SOIC-24 compliant
AT28C16E-20LI
Atmel Corporation
Check for Price No No Obsolete 16.384 kbit 8 2KX8 5 V 200 ns EEPROM AUTOMATIC WRITE NO YES 100000 Write/Erase Cycles 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 5 V 3 mA 45 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO 200 µs R-CQCC-N32 Not Qualified e0 85 °C -40 °C 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD 2.54 mm 13.97 mm 11.43 mm ATMEL CORP QFJ QCCN, LCC32,.45X.55 32 unknown EAR99 8542.32.00.51
AT28C16E-15PI
Microchip Technology Inc
Check for Price Obsolete 16.384 kbit 8 2KX8 5 V 150 ns EEPROM NO YES 10 100000 Write/Erase Cycles 1 2000 2.048 k ASYNCHRONOUS PARALLEL 5 V 100 µA 45 µA 5.5 V 4.5 V CMOS 200 µs R-PDIP-T24 85 °C -40 °C 24 PLASTIC/EPOXY DIP DIP24,.6 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 5.59 mm 31.9 mm 15.24 mm MICROCHIP TECHNOLOGY INC DIP-24 compliant