Filter Your Search
1 - 5 of 5 results
|
AT28C256E-20DM/883-815
Microchip Technology Inc
|
$284.8525 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | EEPROM | AUTOMATIC WRITE | 10 | 100000 Write/Erase Cycles | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5 V | 300 µA | 50 µA | 5.5 V | 4.5 V | CMOS | MILITARY | 10 ms | HARDWARE/SOFTWARE | R-GDIP-T28 | e0 | 125 °C | -55 °C | NOT SPECIFIED | MIL-STD-883 Class C | NOT SPECIFIED | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 37.215 mm | 15.24 mm | MICROCHIP TECHNOLOGY INC | DIP-28 | compliant | 3A001.A.2.C | 8542.32.00.51 | Microchip | |||||||||||||
|
AT28C256E-20DM
Atmel Corporation
|
Check for Price | No | No | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 5 V | 300 µA | 80 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | 10 ms | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | WDIP | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 37.25 mm | 15.24 mm | ATMEL CORP | WDIP, DIP28,.6 | compliant | 3A001.A.2.C | 8542.32.00.51 | DIP | 28 | ||||||||||
|
AT28C256E-20DM
Microchip Technology Inc
|
Check for Price | No | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 5 V | 300 µA | 80 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | 10 ms | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | WDIP | DIP28,.6 | RECTANGULAR | IN-LINE, WINDOW | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 37.25 mm | 15.24 mm | MICROCHIP TECHNOLOGY INC | 0.600 INCH, WINDOWED, CERDIP-28 | compliant | 3A001.A.2.C | 8542.32.00.51 | |||||||||||||
|
AT28C256E-20DM/883
Atmel Corporation
|
Check for Price | No | No | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 5 V | 300 µA | 50 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | 10 ms | R-GDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | MIL-STD-883 Class C | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 37.215 mm | 15.24 mm | ATMEL CORP | DIP, DIP28,.6 | compliant | 3A001.A.2.C | 8542.32.00.51 | DIP | 28 | ||||||||
|
AT28C256E-20DM/883
Microchip Technology Inc
|
Check for Price | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | EEPROM | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 300 µA | 50 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | 10 ms | R-GDIP-T28 | 125 °C | -55 °C | NOT SPECIFIED | MIL-STD-883 Class B | NOT SPECIFIED | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 37.215 mm | 15.24 mm | MICROCHIP TECHNOLOGY INC | DIP-28 | compliant | 3A001.A.2.C | 8542.32.00.51 |