Parametric results for: bb501 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 6

6 hits Apply

SOURCE 4

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

6 V 6

6 hits Apply

Drain Current-Max (ID) (1)

20 mA 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

0.04 pF 6

6 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 6

6 hits Apply

R-PDSO-G4 6

6 hits Apply

Manufacturer (2)

Hitachi Ltd 2 Renesas Electronics Corporation 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 6

6 hits Apply

DUAL GATE, DEPLETION MODE 3 DUAL GATE, ENHANCEMENT MODE 3

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Obsolete 2 Transferred 4

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

100 mW 1 150 mW 1

Min (W) - Max (W)

6 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply