Parametric results for: bb504 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 6

8 hits Apply

SOURCE 4

8 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

6 V 8

8 hits Apply

Drain Current-Max (ID) (1)

30 mA 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

0.05 pF 8

8 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 8

8 hits Apply

R-PDSO-G4 8

8 hits Apply

e6 1

8 hits Apply

Manufacturer (2)

Hitachi Ltd 2 Renesas Electronics Corporation 6

8 hits Apply

1 2

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

4 8

8 hits Apply

DUAL GATE, DEPLETION MODE 8

8 hits Apply

150.0 °C 8

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

SMALL OUTLINE 8

8 hits Apply

Obsolete 5 Transferred 3

8 hits Apply

Yes 4

8 hits Apply

260 2 NOT SPECIFIED 2

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

100 mW 4 150 mW 4

Min (W) - Max (W)

8 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 8

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply