Parametric results for: bsh111 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 8

12 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 10

12 hits Apply

DS Breakdown Voltage-Min (1)

55 V 10

12 hits Apply

Drain Current-Max (ID) (2)

210 mA 2 335 mA 9

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (1)

4 Ω 10

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

12 hits Apply

7 pF 2 10 pF 8

Min (pF) - Max (pF)

12 hits Apply

TO-236AB 10

12 hits Apply

R-PDSO-G3 10

12 hits Apply

e3 11

12 hits Apply

Manufacturer (3)

Nexperia 5 NXP Semiconductors 6 Philips Semiconductors 1

12 hits Apply

1 11

12 hits Apply

Number of Elements (1)

1 11

12 hits Apply

Number of Terminals (1)

3 10

12 hits Apply

ENHANCEMENT MODE 11

12 hits Apply

150.0 °C 5

12 hits Apply

PLASTIC/EPOXY 10

12 hits Apply

RECTANGULAR 10

12 hits Apply

SMALL OUTLINE 10

12 hits Apply

Active 5 Obsolete 2 Transferred 5

12 hits Apply

Yes 3

12 hits Apply

260 9

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

12 hits Apply

830 mW 4

12 hits Apply

Surface Mount (1)

YES 11

12 hits Apply