Parametric results for: cat-2 under EEPROMs

All Filters Access Time-Max Additional Feature Alternate Memory Width Boot Block Clock Frequency-Max (fCLK) Command User Interface Data Polling Data Retention Time-Min Endurance I/O Type I2C Control Byte JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Mounting Feature Number of Functions Number of Ports Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Power Supplies Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (16)

15 ns 1 45 ns 21 55 ns 40 70 ns 171 90 ns 1,206 100 ns 19 120 ns 2,383 150 ns 2,285 170 ns 10 200 ns 1,795 230 ns 1 250 ns 960 300 ns 606 350 ns 428 375 ns 120 700 ns 3

Min (ns) - Max (ns)

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10 YEAR DATA RETENTION ;EEPROM HARDWARE/SOFTWARE RECALL/STORE 8 10 YEAR DATA RETENTION; 100000 PROGRAM/ERASE CYCLES 46 10 YEAR DATA RETENTION; LOW POWER STANDBY MODE 4 10 YEARS DATA RETENTION 16 100 YEAR DATA RETENTION 370 10000 PROGRAM/ERASE CYCLES 35 10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS 176 100000 PROGRAM/ERASE CYCLES 32 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION 44 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION; BOTTOM BOOT BLOCK 38 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION; TOP BOOT BLOCK 37 100000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION 149 100000 PROGRAM/ERASE CYCLES; 100 YEARS DATA RETENTION; SELF TIMED WRITE 42 100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS 108 100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS 216 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION 926 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION; SELF TIMED WRITE 42 1000000 PROGRAM/ERASE CYCLES; 100 YEARS DATA RETENTION; SELF TIMED WRITE 32 1000K PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION 12 100K PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION 24 2 WIRE INTERFACE; PAGE WRITE 119 5MICROAMP STANDBY CURRENT AVAILABLE @ 125 TEMP, AND OPERATES WITH 1.8VMIN SUPPLY @ 0.1MHZ 4 ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ, 1.7-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ 3 ALSO AVAILABLE 1.7-5.5V OPERATES WITH 5MHZ 3 ALSO AVAILABLE 1.7-5.5V WITH 0.1MHZ WITH 0.4MHZ FOR -40 TO 125 AND -40 TO 85 DEG CEL 2 ALSO AVAILABLE 1.8-5.5V WITH 5MHZ FOR -40 TO 85 DEG CEL 3 ALSO OPERATES 1.7V AT 100 KHZ 2 Also operates at 1.8V 10 ALSO OPERATES AT 5MHZ FROM 2.5V-5.5V SUPPLY 14 ALSO OPERATES WITH 1.8V MIN @ 5MHZ 3 ALSO OPERATES WITH 1.8V MIN AT 4 KHZ 2 AUTOMATIC WRITE 32 AUTOMATIC WRITE; PAGE WRITE 191 BAT BUP SW:N;MNL RST:N;OV DET:N;PW FL IP:N;PW FL IO:N;PW FL OP:N;PRG RST DLY:N;UV DET:N;WD:Y;WWD:N 300 BOTTOM BOOT BLOCK 100 DATA RETENTION > 10 YEARS 40 DEEP POWER-DOWN 132 HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION 34 HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION; BOTTOM BOOT BLOCK 15 HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION; TOP BOOT BLOCK 23 I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE 312 IT ALSO OPERATES AT 0.1MHZ 19 IT ALSO OPERATES AT 0.1MHZ AT 1.8MIN 30 IT ALSO OPERATES AT 1MHZ AT 1.8MIN 15 IT ALSO OPERATES AT 3MHZ AT 2.5MIN 15 IT ALSO OPERATES AT 5MHZ AT 1.8MIN 34 IT ALSO OPERATES AT FREQUENCY 0.4 MHZ AND 0.1 MHZ AT 1.7 TO 5.5 V SUPPLY VOLTAGE 4 IT ALSO OPERATES AT FREQUENCY 3 MHZ AT 1.8 TO 5.5 V SUPPLY VOLTAGE 3 TOP BOOT BLOCK 96 WRITE PROTECT; I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE 396

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1 10 8 60

Min - Max

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BOTTOM 321 TOP 327

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Clock Frequency-Max (fCLK) (9)

100 kHz 6,079 200 kHz 33 400 kHz 3,531 1 MHz 3,096 2 MHz 33 3 MHz 549 5 MHz 2,597 10 MHz 332 20 MHz 68

Min (MHz) - Max (MHz)

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NO 3,506 YES 1,684

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NO 1,556 YES 3,634

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10 345 100 12,324

Min - Max

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1000.0 Write/Erase Cycles 92 10000.0 Write/Erase Cycles 672 100000.0 Write/Erase Cycles 5,347 1000000.0 Write/Erase Cycles 9,956 1.0E7 Write/Erase Cycles 42

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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COMMON 177

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1010000R 66 101000MR 21 10100DDR 360 10100MMR 22 1010DDDR 4,157 1010DDMR 818 1010DMMR 396 1010MMMR 522 1010XMMR 45 1010XXMR 45 1010XXXR 582 1011DDDR 4 1DDDMMMR 98

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R-CQCC-N32 7 R-GDIP-T14 4 R-GDIP-T28 13 R-GDIP-T40 7 R-PBCC-N8 3 R-PBGA-B4 19 R-PBGA-B5 14 R-PBGA-B8 14 R-PDIP-T14 8 R-PDIP-T18 54 R-PDIP-T24 66 R-PDIP-T28 719 R-PDIP-T32 462 R-PDIP-T40 83 R-PDIP-T8 3,776 R-PDSO-F8 16 R-PDSO-G14 1,673 R-PDSO-G16 645 R-PDSO-G20 202 R-PDSO-G24 203 R-PDSO-G28 2,965 R-PDSO-G32 2,333 R-PDSO-G40 256 R-PDSO-G44 40 R-PDSO-G5 192 R-PDSO-G8 13,610 R-PDSO-N8 366 R-PQCC-J32 2,409 R-PQCC-N32 7 R-XBCC-N8 2 R-XBCS-B5 2 R-XDIP-T18 12 R-XDIP-T24 6 R-XDIP-T28 55 R-XDIP-T32 27 R-XDIP-T40 4 R-XDIP-T8 2 R-XDSO-G8 33 R-XDSO-N8 252 R-XQCC-N32 50 R-XUUC-N8 3 R-XXMA-X 8 S-PBGA-B4 10 S-PDSO-G8 1,886 S-PDSO-N8 10 S-PQCC-J44 70 S-XDSO-N8 96 S-XQCC-N8 4 X-XUUC-N 4 X-XUUC-N8 24

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e0 15,072 e1 12 e2 8 e3 8,968 e4 3,545

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760 µm 8 850 µm 4 856 µm 23 860 µm 10 2 mm 34 2.3 mm 6 2.9 mm 129 2.92 mm 8 3 mm 1,894 4.4 mm 2,305 4.8997 mm 42 4.9 mm 5,222 5 mm 945 5.23 mm 36 5.255 mm 61 5.3 mm 1,502 6.5 mm 166 8.65 mm 268 9.27 mm 811 9.271 mm 53 9.35 mm 24 9.36 mm 417 9.59 mm 1,580 9.9 mm 298 9.905 mm 16 10.3 mm 70 11.8 mm 1,109 12.4 mm 718 13.965 mm 238 13.97 mm 1,881 15.4 mm 202 16.5862 mm 42 16.89 mm 8 17.9 mm 1,501 17.905 mm 24 18.4 mm 1,266 20 mm 29 21.47 mm 4 21.97 mm 28 31.875 mm 59 36.695 mm 381 36.703 mm 232 37.1475 mm 7 37.4 mm 48 42.03 mm 249 42.037 mm 122 42.8 mm 8 52.19 mm 19 52.197 mm 38 52.324 mm 7

Min (mm) - Max (mm)

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Manufacturer (5)

Bourns Inc 243 Catalyst Semiconductor 23,204 onsemi 12,465 Rochester Electronics LLC 765 TDK Corporation 8

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Memory Density (26)

128 bit 220 256 bit 255 512 bit 28 1.024 kbit 4,076 2.048 kbit 3,856 4.096 kbit 2,481 8.192 kbit 1,299 16.384 kbit 2,435 32.768 kbit 2,006 65.536 kbit 7,124 131.072 kbit 1,538 262.144 kbit 2,841 524.288 kbit 1,076 1.0486 Mbit 1,341 1.5729 Mbit 162 2.0972 Mbit 667 4.1943 Mbit 6 67.1089 Mbit 5 274.8779 Gbit 1 549.7558 Gbit 1 858.9935 Gbit 1 1.0995 Tbit 1 1.718 Tbit 1 2.199 Tbit 1 3.436 Tbit 1 6.8719 Tbit 1

Min (bit) - Max (bit)

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EEPROM 28,353 EEPROM CARD 4 FLASH 2,697 FLASH MODULE 8 NON-VOLATILE SRAM 280 OTP ROM 28 UVPROM 111

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Memory Width (4)

1 181 4 146 8 30,657 16 472

Min - Max

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1 3,910 2 978 2A 1,556 2a 4 3 1,678 NOT APPLICABLE 22 NOT SPECIFIED 160

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SURFACE MOUNT 243

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1.0 25,538

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1 195 2 28

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1,2,1 318 1,2,1,1 122 1,2,1,2 36 1,2,1,3 92 32 60 64 36

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10 242 14 1,685 16 645 18 66 20 202 24 275 28 3,753 32 5,295 4 31 40 350 44 110 5 208 8 20,098

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16 words 379 32 words 28 64 words 153 128 words 4,066 256 words 3,801 512 words 2,460 1.024 k 1,288 2.048 k 2,394 4.096 k 1,999 8.192 k 7,155 16.384 k 1,599 32.768 k 2,869 65.536 k 1,259 131.072 k 1,194 196.608 k 162 262.144 k 633 524.288 k 4 8.3886 M 5 34.3597 G 1 68.7195 G 1 107.3742 G 1 137.439 G 1 214.7484 G 1 274.8779 G 1 429.4967 G 1 858.9935 G 1

Min (words) - Max (words)

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16.0 379 32.0 28 64.0 153 128.0 4,066 256.0 3,801 512.0 2,460 1000.0 1,288 2000.0 2,394 4000.0 1,999 8000.0 7,155 16000.0 1,599 32000.0 2,869 64000.0 1,259 128000.0 1,194 192000.0 162 256000.0 633 512000.0 4 8000000.0 5 3.2E10 1 6.4E10 1 1.0E11 1 1.28E11 1 2.0E11 1 2.56E11 1 4.0E11 1 8.0E11 1

Min - Max

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ASYNCHRONOUS 8,462 SYNCHRONOUS 16,520

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70.0 °C 9,380 85.0 °C 11,507 105.0 °C 6,726 125.0 °C 5,306 170.0 °C 50

Min (°C) - Max (°C)

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-55.0 °C 276 -40.0 °C 23,263 0.0 °C 9,430

Min (°C) - Max (°C)

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Organization (39)

100GX8 1 128GX8 1 128KX16 36 128KX8 1,158 128X16 53 128X8 4,013 16KX1 61 16KX8 1,538 16X16 145 16X8 234 192KX8 162 1KX1 20 1KX8 1,268 200GX8 1 256GX8 1 256KX16 2 256KX8 631 256X4 18 256X8 3,783 2KX1 20 2KX8 2,374 32GX8 1 32KX1 28 32KX8 2,841 32X16 28 400GX8 1 4KX1 21 4KX8 1,978 512KX8 4 512X8 2,460 64GX8 1 64KX16 183 64KX8 1,076 64X16 25 64X4 128 800GX8 1 8KX1 31 8KX8 7,124 8MX8 5

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3-STATE 2,094 OPEN-DRAIN 741

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NO 46

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CERAMIC 157 CERAMIC, GLASS-SEALED 24 CERAMIC, METAL-SEALED COFIRED 7 PLASTIC/EPOXY 32,111 UNSPECIFIED 415

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CSP 4 DIE 31 DIP 5,294 HVQCCN 3 HVSON 471 HVSSON 7 HVSSOP 2 LSSOP 20 QCCJ 2,479 QCCN 57 SON 218 SOP 13,504 TSOP 16 TSOP1 2,647 TSOP1-R 373 TSOP2 10 TSSOP 7,351 VFBGA 49 VQCCN 4 VSOF 12 VSON 34 VSSOP 120 WQCCN 7 XMA 8

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BGA4,2X2,16 11 BGA5,3X3,10/6 3 BGA5,3X3,14/8 2 DIE OR CHIP 6 DIP(UNSPEC) 2 DIP14,.3 12 DIP18,.3 44 DIP24(UNSPEC) 1 DIP24,.6 62 DIP28,.6 526 DIP32(UNSPEC) 38 DIP32,.3 6 DIP32,.6 275 DIP40,.6 88 DIP8,.3 1,679 LCC32,.45X.55 57 LDCC32,.5X.6 1,370 LDCC44,.7SQ 41 SO28(UNSPEC) 2 SOLCC8,.08,20 16 SOLCC8,.11,20 250 SOLCC8,.12,20 9 SOLCC8,.12,25 40 SOLCC8,.2,25 86 SOP14,.25 236 SOP16,.25 366 SOP16,.4 35 SOP24,.4 119 SOP24,.45 42 SOP28,.4 481 SOP28,.45 378 SOP28,.5 5 SOP44,.63 40 SOP8,.25 3,818 SOP8,.3 806 TSOP5/6,.11,37 89 TSSOP14(UNSPEC) 12 TSSOP14,.25 808 TSSOP20,.25 162 TSSOP28,.53,22 627 TSSOP32,.56,20 220 TSSOP32,.8,20 833 TSSOP40,.56,20 64 TSSOP40,.8,20 78 TSSOP8,.12,20 5 TSSOP8,.19 1,210 TSSOP8,.25 1,779 WAFER 6

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RECTANGULAR 30,623 RECTANGULAR PACKAGE 243 SQUARE 2,078 UNSPECIFIED 28

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CHIP CARRIER 2,536 CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE 5 CHIP CARRIER, VERY THIN PROFILE 4 CHIP CARRIER, WINDOW 7 CHIP SCALE 4 GRID ARRAY 8 GRID ARRAY, VERY THIN PROFILE, FINE PITCH 49 IN-LINE 5,294 MICROELECTRONIC ASSEMBLY 8 SMALL OUTLINE 13,756 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 472 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH 9 SMALL OUTLINE, LOW PROFILE, SHRINK PITCH 20 SMALL OUTLINE, THIN PROFILE 3,016 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 7,344 SMALL OUTLINE, VERY THIN PROFILE 38 SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH 120 SMT 242 UNCASED CHIP 31

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128 words 409 32 words 2,109 64 words 583

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Power Supplies (4)

2/5 V 65 3.3 V 44 3/5 V 110 5 V 175

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Sector Size (5)

16K,8K,32K,64K 128 16K,8K,64K,96K 54 16K,8K,96K,128K 68 2K 96 8K,4K,112K 318

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Supply Voltage-Nom (Vsup) (8)

-15 V 6 1.8 V 38 2.5 V 603 3 V 7,439 3.3 V 2,969 3.6 V 60 5 V 15,583 15 V 6

Min (V) - Max (V)

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