Filter Your Search
1 - 8 of 8 results
|
CAT28C16AGI-20T
Catalyst Semiconductor
|
Check for Price | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||
|
CAT28C16AGI-20
Catalyst Semiconductor
|
Check for Price | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||
|
CAT28C16AGI-20T
onsemi
|
Check for Price | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | NO | YES | 100 | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN | J BEND | 1.27 mm | QUAD | 3.18 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
|
CAT28C16AGI-20T
Rochester Electronics LLC
|
Check for Price | Yes | Yes | Contact Manufacturer | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ROCHESTER ELECTRONICS LLC | QFJ | LEAD AND HALOGEN FREE, PLASTIC, LCC-32 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
|
CAT28C16AGI20
Rochester Electronics LLC
|
Check for Price | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PQCC-J32 | COMMERCIAL | NOT SPECIFIED | 85 °C | -40 °C | 260 | NOT SPECIFIED | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ROCHESTER ELECTRONICS LLC | QFJ | LEAD AND HALOGEN FREE, PLASTIC, LCC-32 | 32 | unknown | |||||||||||||||||
|
CAT28C16AGI20
onsemi
|
Check for Price | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | NO | YES | 100 | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PQCC-J32 | Not Qualified | 85 °C | -40 °C | 260 | NOT SPECIFIED | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.18 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | PLCC-32 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||||
|
CAT28C16AGI-20
Rochester Electronics LLC
|
Check for Price | Yes | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | EEPROM | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ROCHESTER ELECTRONICS LLC | QFJ | QCCJ, | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
|
CAT28C16AGI-20
onsemi
|
Check for Price | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 5 V | 200 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 35 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 10 ms | R-PQCC-J32 | Not Qualified | 85 °C | -40 °C | 260 | NOT SPECIFIED | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | LEAD AND HALOGEN FREE, PLASTIC, LCC-32 | 32 | unknown |