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CY14B108N-ZSP25XI
Infineon Technologies AG
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$55.8444 | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 3 V | 25 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 75 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G54 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 20 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 800 µm | DUAL | 1.2 mm | 22.415 mm | 10.16 mm | INFINEON TECHNOLOGIES AG | TSOP2-54 | compliant | Infineon | |||||||
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CY14B108N-ZSP25XI
Cypress Semiconductor
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$56.1674 | Yes | Transferred | 8.3886 Mbit | 16 | 512KX16 | 3 V | 25 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 75 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G54 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 20 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 800 µm | DUAL | 1.2 mm | 22.415 mm | 10.16 mm | CYPRESS SEMICONDUCTOR CORP | TSOP2-54 | compliant | TSOP2 | 54 | 3A991.B.2.A | 8542.32.00.41 | ||||
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CY14B108N-ZSP45XI
Infineon Technologies AG
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$63.6300 | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 3 V | 45 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 57 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G54 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 20 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 800 µm | DUAL | 1.2 mm | 22.415 mm | 10.16 mm | INFINEON TECHNOLOGIES AG | TSOP2-54 | compliant | Infineon | |||||||
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CY14B108N-BA25XI
Infineon Technologies AG
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$85.0900 | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 3 V | 25 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 75 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 20 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | INFINEON TECHNOLOGIES AG | FBGA-48 | compliant | Infineon | |||||||
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CY14B108N-BA25XI
Cypress Semiconductor
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$85.5900 | Yes | Yes | Transferred | 8.3886 Mbit | 16 | 512KX16 | 3 V | 25 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 75 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 20 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | FBGA-48 | compliant | BGA | 48 | 3A991.B.2.A | 8542.32.00.41 | |||
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CY14B108N-BA45XCT
Cypress Semiconductor
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Check for Price | Yes | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 45 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 55 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B48 | Not Qualified | 70 °C | 260 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48 | compliant | BGA | 48 | 3A991.B.2.A | 8542.32.00.41 | |||||||||
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CY14B108N-BA45XC
Cypress Semiconductor
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Check for Price | Yes | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 45 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 55 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B48 | Not Qualified | 70 °C | 260 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48 | compliant | BGA | 48 | 3A991.B.2.A | 8542.32.00.41 | |||||||||
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CY14B108N-BA20XC
Cypress Semiconductor
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Check for Price | Yes | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 20 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 70 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B48 | Not Qualified | 70 °C | 260 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48 | compliant | BGA | 48 | 3A991.B.2.A | 8542.32.00.41 | |||||||||
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CY14B108N-BA45XI
Infineon Technologies AG
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Check for Price | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 3 V | 45 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 57 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 20 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | INFINEON TECHNOLOGIES AG | FBGA-48 | compliant | Infineon | |||||||
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CY14B108N-BA45XIT
Infineon Technologies AG
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Check for Price | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 3 V | 45 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 57 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 20 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | INFINEON TECHNOLOGIES AG | FBGA-48 | compliant | Infineon |