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CY14B108N-BA45XIT
Infineon Technologies AG
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Check for Price | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 3 V | 45 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 57 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 20 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | INFINEON TECHNOLOGIES AG | FBGA-48 | compliant | Infineon | ||||||
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CY14B108N-BA45XIT
Cypress Semiconductor
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Check for Price | Yes | Transferred | 8.3886 Mbit | 16 | 512KX16 | 3 V | 45 ns | NON-VOLATILE SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 10 mA | 57 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 20 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 750 µm | BOTTOM | 1.2 mm | 10 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | FBGA-48 | compliant | BGA | 48 | 3A991.B.2.A | 8542.32.00.41 |