Parametric results for: cy62126dv30l55bvxe under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

55 ns 2

2 hits Apply

COMMON 1

2 hits Apply

R-PBGA-B48 2

2 hits Apply

e1 1 e4 1

2 hits Apply

8 mm 2

2 hits Apply

Manufacturer (2)

Cypress Semiconductor 1 Rochester Electronics LLC 1

2 hits Apply

Memory Density (1)

1.0486 Mbit 2

2 hits Apply

STANDARD SRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

3 1 NOT SPECIFIED 1

2 hits Apply

1.0 2

2 hits Apply

48 2

2 hits Apply

65.536 k 2

2 hits Apply

64000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

125.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

64KX16 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

VFBGA 2

2 hits Apply

TSOP44,.46,32 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

GRID ARRAY, VERY THIN PROFILE, FINE PITCH 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply