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MTA4ATF51264AZ-3G2E1
Micron Technology Inc
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$11.4911 Buy | Obsolete | 34.3597 Gbit | 64 | 512MX64 | 1.2 V | SINGLE BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH; WD-MAX | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 1.26 V | 1.14 V | CMOS | OTHER | R-XDMA-N288 | 85 °C | 288 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | 31.4 mm | 133.35 mm | 2.7 mm | UDIMM-288 | Unknown | EAR99 | 8542.32.00.36 | 2017-05-26 | ||||||
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AS4C512M16D3LA-10BCN
Alliance Memory Inc
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$21.9468 Buy | Yes | Active | 8.5899 Gbit | 16 | 512MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 1.425 V | 1.275 V | CMOS | OTHER | R-PBGA-B96 | 3 | 95 °C | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13.5 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 | |||
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AS4C1G8D3LA-10BCN
Alliance Memory Inc
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$21.9468 Buy | Yes | Active | 8.5899 Gbit | 8 | 1GX8 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B78 | 3 | 95 °C | 78 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.6 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 | |||
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AS4C1G8D3LA-10BIN
Alliance Memory Inc
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$23.3628 Buy | Yes | Active | 8.5899 Gbit | 8 | 1GX8 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B78 | 3 | 95 °C | -40 °C | 78 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.6 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 | ||
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AS4C1G8D3LA-10BAN
Alliance Memory Inc
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$33.1985 Buy | Yes | Active | 8.5899 Gbit | 8 | 1GX8 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B78 | 3 | 105 °C | -40 °C | 78 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.6 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 | ||
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AS4C1G8D3LA-10BINTR
Alliance Memory Inc
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$34.4000 Buy | Yes | Active | 8.5899 Gbit | 8 | 1GX8 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 1000000000 | 1.0737 G | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B78 | 3 | 95 °C | -40 °C | 78 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 10.6 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 | ||
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AS4C512M16D3LA-10BIN
Alliance Memory Inc
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$36.3639 Buy | Yes | Active | 8.5899 Gbit | 16 | 512MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 1.425 V | 1.275 V | CMOS | INDUSTRIAL | R-PBGA-B96 | 3 | 95 °C | -40 °C | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13.5 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 | ||
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AS4C512M16D3LA-10BINTR
Alliance Memory Inc
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$36.4800 Buy | Yes | Active | 8.5899 Gbit | 16 | 512MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 1.425 V | 1.275 V | CMOS | INDUSTRIAL | R-PBGA-B96 | 3 | 95 °C | -40 °C | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13.5 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 | ||
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AS4C512M16D3LA-10BAN
Alliance Memory Inc
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$40.5221 Buy | Yes | Active | 8.5899 Gbit | 16 | 512MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 1.425 V | 1.275 V | CMOS | INDUSTRIAL | R-PBGA-B96 | 3 | 105 °C | -40 °C | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13.5 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 | ||
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AS4C512M16D3LA-10BANTR
Alliance Memory Inc
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$40.6350 Buy | Yes | Active | 8.5899 Gbit | 16 | 512MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 1.425 V | 1.275 V | CMOS | INDUSTRIAL | R-PBGA-B96 | 3 | 105 °C | -40 °C | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13.5 mm | 9 mm | TFBGA, | Compliant | EAR99 | 8542.32.00.36 | 2019-03-07 |